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NTS2101P
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ?250 m A
?8.0
?20
?10
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ?6.4 V
T J = 25 ° C
T J = 70 ° C
?1.0
?5.0
m A
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ?250 m A
?0.45
?0.7
2.6
V
mV/ ° C
Temperature Coefficient
Drain?to?Source On Resistance
R DS(on)
V GS = ?4.5 V, I D = ?1.0 A
65
100
m W
CHARGES AND CAPACITANCES
V GS = ?2.5 V, I D = ?0.5 A
V GS = ?1.8 V, I D = ?0.3 A
78
117
140
210
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = ?8.0 V
V GS = ?5.0 V, V DD = ?5.0 V,
I D = ?1.0 A
640
120
82
6.4
0.7
1.0
1.5
pF
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn?On Delay Time
Rise Time
Turn?Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
V GS = ?4.5 V, V DD = ?4.0 V,
I D = ?1.0 A, R G = 6.2 W
6.2
15
26
18
ns
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ?0.3 A
T J = 25 ° C
T J = 125 ° C
?0.62
?0.51
?1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t RR
T a
T b
Q RR
V GS = 0 V, dI SD /dt = 100 A/ m s,
I S = ?1.0 A
23.4
7.7
15.7
9.5
ns
nC
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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